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- [24] LIFETIMES OF NON-EQUILIBRIUM CARRIERS AND REEMISSION OF LUMINESCENCE IN INGAASP HETEROSTRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (02): : 218 - 221
- [25] INFLUENCE OF RECOMBINATION IN EMITTERS ON THE PHOTO-LUMINESCENCE CHARACTERISTICS OF DOUBLE IN0.5GA0.5P-INGAASP HETEROSTRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (09): : 1031 - 1034
- [26] ILLUMINATION-INDUCED CHANGE IN THE INTERNAL QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED BY DEEP CENTERS IN GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (02): : 165 - 167
- [30] INFLUENCE OF NONRADIATIVE RECOMBINATION ON LASER CHARACTERISTICS OF DOUBLE INGAASP HETEROSTRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (05): : 516 - 518