IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON

被引:218
作者
CONWELL, EM
机构
来源
PHYSICAL REVIEW | 1956年 / 103卷 / 01期
关键词
D O I
10.1103/PhysRev.103.51
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:51 / 60
页数:10
相关论文
共 35 条
[1]   THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J].
AIGRAIN, P .
PHYSICA, 1954, 20 (11) :978-982
[2]  
BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355
[3]   IMPURITY CENTERS IN GE AND SI [J].
BURTON, JA .
PHYSICA, 1954, 20 (10) :845-854
[4]   HALL EFFECT AND DENSITY OF STATES IN GERMANIUM [J].
CONWELL, EM .
PHYSICAL REVIEW, 1955, 99 (04) :1195-1198
[5]   ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].
DEBYE, PP ;
CONWELL, EM .
PHYSICAL REVIEW, 1954, 93 (04) :693-706
[6]   EFFECTIVE MASSES OF HOLES IN SILICON [J].
DEXTER, RN ;
LAX, B .
PHYSICAL REVIEW, 1954, 96 (01) :223-224
[7]  
DRESSELHAUS, 1953, PHYS REV, V92, P827
[8]  
EPSTEIN A, 1954, PHYS REV, V94, P1426
[9]  
FLETCHER, 1954, PHYS REV, V94, P1392
[10]  
FLETCHER, 1954, PHYS REV, V95, P844