HOMOGENEOUS SOLUTION GROWN EPITAXIAL GAAS BY TIN DOPING

被引：19

作者：

HARRIS, JS

SNYDER, WL

机构：

[1] Stanford Electronics Laboratories, Stanford, CA

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 05期

关键词：

D O I：

10.1016/0038-1101(69)90088-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tin doped epitaxial GaAs single crystals were grown from a Ga solution. The C-V characteristics of Schottky barrier diodes were used to determine the electron concentration profiles of the GaAs crystals. These profiles were flat within ± 5 per cent to a depth of 165 μ. The electron concentration was controlled at specified values between 3 × 1014 and 5 × 1016 cm-3. The distribution coefficient of tin in GaAs is 1 × 10-4 between 800 and 850°C. © 1969.

引用

页码：337 / +

页数：1

共 12 条

[1] GALLIUM ARSENITIDE OF HIGH MOBILITY OBTAINED BY EPITAXY IN LIQUID PHASE [J].