ANOMALOUS TEMPERATURE DEPENDENCE OF CS RESISTIVITY AT HIGH PRESSURE

被引：19
作者：
MCWHAN, DB
STEVENS, AL
机构：
[1] Bell Telephone Laboratories, Murray Hill, NJ
来源：
SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 02期
关键词：
D O I：
10.1016/0038-1098(69)90405-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Measurement of the electrical resistivity of Cs metal from 3 K to 298 K at different pressures up to 60 kbar reveals an anomalously large T2 contribution. The coefficient of this term rises to a maximum of ≈ 4 × 10-10 Ωcm K-2 at 42.5 kbar, where an electronic transition occurs, and then decreases with increasing pressure. © 1969.
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页码：301 / &
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