INJECTION-LASERS OF SPECTRAL RANGE OF 2.0-2.4 MU-M OPERATING AT ROOM-TEMPERATURE

被引：0
|
作者：
AKIMOVA, IV
BOCHKAREV, AE
DOLGINOV, LM
DRAKIN, AE
DRUZHININA, LV
ELISEEV, PG
SVERDLOV, BN
SKRIPKIN, VA
机构：
来源：
ZHURNAL TEKHNICHESKOI FIZIKI | 1988年 / 58卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：701 / 707
页数：7
相关论文
共 50 条
  • [1] ROOM-TEMPERATURE GAINASSB/ALGAASSB DH INJECTION-LASERS AT 2.2 MU-M
    CANEAU, C
    SRIVASTAVA, AK
    DENTAI, AG
    ZYSKIND, JL
    POLLACK, MA
    ELECTRONICS LETTERS, 1985, 21 (18) : 815 - 817
  • [2] ROOM-TEMPERATURE IN GASBAS INJECTION-LASERS AT THE WAVELENGTH OF 1.9-2.3 MU-M
    BOCHKAREV, AE
    DOLGINOV, LM
    DRAKIN, AE
    DRUZHININA, LV
    ELISEEV, PG
    SVERDLOV, BN
    KVANTOVAYA ELEKTRONIKA, 1985, 12 (06): : 1309 - 1311
  • [3] NEW SEMICONDUCTOR INJECTION-LASERS FOR CW, ROOM-TEMPERATURE OPERATION AT 1 MU-M WAVELENGTHS
    NAHORY, RE
    POLLACK, MA
    DIXON, RW
    OPTICS COMMUNICATIONS, 1976, 18 (01) : 37 - 38
  • [4] CW STIMULATED-EMISSION AT ROOM-TEMPERATURE FROM INJECTION-LASERS UTILIZING THE INGASBAS/GAALSBAS HETEROSTRUCTURE AND OPERATING IN THE SPECTRAL RANGE FROM 2.2-MU-M TO 2.4-MU-M
    BOCHKAREV, AE
    DOLGINOV, LM
    DRAKIN, AE
    ELISEEV, PG
    SVERDLOV, BN
    KVANTOVAYA ELEKTRONIKA, 1988, 15 (11): : 2171 - 2172
  • [5] CW INJECTION-LASERS IN THE RANGE OF 1,5-1,6 MU-M
    DOLGINOV, LM
    DRAKIN, AE
    DURAEV, VP
    ELISEEV, PG
    MALKOVA, NV
    MILVIDSKII, MG
    SVERDLOV, BN
    SKRIPKIN, VA
    SHEVCHENKO, EG
    KVANTOVAYA ELEKTRONIKA, 1982, 9 (09): : 1749 - 1749
  • [6] INVERTER PERFORMANCE OF 0.10 MU-M CMOS OPERATING AT ROOM-TEMPERATURE
    INABA, S
    MIZUNO, T
    IWASE, M
    TAKAHASHI, M
    NIIYAMA, H
    HAZAMA, H
    YOSHIMI, M
    TORIUMI, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2399 - 2404
  • [7] CW BURIED HETEROSTRUCTURE MESASTRIPE GAINPAS-INP LASERS OPERATING AT ROOM-TEMPERATURE IN THE WAVELENGTH RANGE OF 1.24-1.28 MU-M
    BEZOTOSNYI, VV
    DOLGINOV, LM
    ELISEEV, PG
    MILVIDSKII, MG
    SVERDLOV, BN
    SHEVCHENKO, EG
    SHEPEKINA, GV
    KVANTOVAYA ELEKTRONIKA, 1980, 7 (09): : 1990 - 1992
  • [8] ROOM-TEMPERATURE 2.78 MU-M ALGAASSB/INGAASSB QUANTUM-WELL LASERS
    LEE, H
    YORK, PK
    MENNA, RJ
    MARTINELLI, RU
    GARBUZOV, DZ
    NARAYAN, SY
    CONNOLLY, JC
    APPLIED PHYSICS LETTERS, 1995, 66 (15) : 1942 - 1944
  • [9] A ROOM-TEMPERATURE 0.1 MU-M CMOS ON SOI
    SHAHIDI, GG
    ANDERSON, CA
    CHAPPELL, BA
    CHAPPELL, TI
    COMFORT, JH
    DAVARI, B
    DENNARD, RH
    FRANCH, RL
    MCFARLAND, PA
    NEELY, JS
    NING, TH
    POLCARI, MR
    WARNOCK, JD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2405 - 2412
  • [10] AN INVESTIGATION OF THE FREQUENCY STABILITY AND TEMPERATURE CHARACTERISTICS OF 1.5 MU-M COUPLED-CAVITY INJECTION-LASERS
    LEE, TP
    BURRUS, CA
    LIU, PL
    SESSA, WB
    LOGAN, RA
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (04) : 374 - 384
12345