MECHANISM OF DEGRADATION OF LDD MOSFETS DUE TO HOT-ELECTRON STRESS

被引：9

作者：

BHATTACHARYYA, A ^{[1
]}

SHABDE, SN ^{[1
]}

机构：

[1] SIGNET CORP, ADV TECHNOL DEV, SUNNYVALE, CA 94088 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期

关键词：

D O I：

10.1109/16.3382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1156 / 1158

页数：3

共 8 条

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[7] FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY [J].

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