ENHANCEMENT OF THE FREE CARRIER DENSITY IN GA1-XALXAS GROWN BY METALLORGANIC VAPOR-PHASE EPITAXY UNDER HIGH-TEMPERATURE GROWTH-CONDITIONS

被引：5
作者：
BASMAJI, P
GUITTARD, M
GIBART, P
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 100卷 / 01期
关键词：
D O I：
10.1002/pssa.2211000154
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：K41 / K45
页数：5
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