TRAPPING IN DEFECT STATES AS A SOURCE OF PULSE HEIGHT DEFECT IN SILICON SURFACE BARRIER DETECTORS

被引：8

作者：

EISLER, PL

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1967年 / 48卷 / 01期

关键词：

D O I：

10.1016/0029-554X(67)90468-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：103 / &

共 16 条

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BEMSKI, G
[J]. PHYSICAL REVIEW, 1955, 100 (02): : 523 - 524
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[5] INEFFICIENT CHARGE COLLECTION IN SILICON SURFACE BARRIER DETECTORS
EISLER, P
[J]. NUCLEAR INSTRUMENTS & METHODS, 1966, 44 (02): : 253 - +
[6] EISLER PL, 1964, AAECTM232 AUSTR AT E
[7] FABRI G, 1964, NASNRC1184 PUBL, P49
[8] TRANSIENT RESPONSE OF A P-N JUNCTION
LAX, B
NEUSTADTER, SF
[J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (09) : 1148 - 1154
[9] MILLER GL, 1962, 1961 P C NUCL EL BEL, V1, P477
[10] RAYMO CT, 1961, IRE T NUCL SCI, VNS8, P157