KINETICS OF RECOMBINATION RADIATION AND TEMPERATURE OF ELECTRON-HOLE PLASMA IN SILICON

被引：16

作者：

DITE, AF ^{[1
]}

LYSENKO, VG ^{[1
]}

TIMOFEEV, VB ^{[1
]}

机构：

[1] ACAD SCI USSR,SOLID STATE PHYS INST,CHERNOGOLOVKA,USSR

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1974年 / 66卷 / 01期

关键词：

D O I：

10.1002/pssb.2220660104

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：53 / 62

页数：10

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[4]

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ANDERSON, PW ;

CHUI, ST ;

RICE, TM .

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[6] ELECTRON-HOLE LIQUIDS IN SEMICONDUCTORS [J].

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RICE, TM .

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[7] CONDENSATION OF EXCITONS IN GERMANIUM AND SILICON [J].

COMBESCOT, M ;

NOZIERES, P .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (17) :2369-+

[8]

DITE AF, 1973, PISMA ESKP TEOR FIZ, V18, P114

[9]

Kaminskii A. S., 1970, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V59, P1937

[10]

KELDYSH LV, 1968, 9 P INT C PHYS SEM M

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