KINETICS OF RECOMBINATION RADIATION AND TEMPERATURE OF ELECTRON-HOLE PLASMA IN SILICON

被引：16

作者：

DITE, AF ^{[1
]}

LYSENKO, VG ^{[1
]}

TIMOFEEV, VB ^{[1
]}

机构：

[1] ACAD SCI USSR,SOLID STATE PHYS INST,CHERNOGOLOVKA,USSR

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1974年 / 66卷 / 01期

关键词：

D O I：

10.1002/pssb.2220660104

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：53 / 62

页数：10

共 12 条

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ANDERSON, PW
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RICE, TM
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (15) : 961 - &
[6] ELECTRON-HOLE LIQUIDS IN SEMICONDUCTORS
BRINKMAN, WF
RICE, TM
[J]. PHYSICAL REVIEW B, 1973, 7 (04): : 1508 - 1523
[7] CONDENSATION OF EXCITONS IN GERMANIUM AND SILICON
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NOZIERES, P
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (17): : 2369 - +
[8] DITE AF, 1973, PISMA ESKP TEOR FIZ, V18, P114
[9] Kaminskii A. S., 1970, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V59, P1937
[10] KELDYSH LV, 1968, 9 P INT C PHYS SEM M