ELECTRICAL CHARACTERISTICS OF OXIDE-NITRIDE-OXIDE FILMS FORMED ON TUNNEL-STRUCTURED STACKED CAPACITORS

被引：5

作者：

MATSUO, N ^{[1
]}

SASAKI, A ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 07期

关键词：

D O I：

10.1109/16.391219

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current conduction mechanism of oxide-nitride-oxide films formed on tunnel-structured stacked capacitor (TSSC) was studied. At positive and negative bias, the Poole-Frenkel (P-F) conduction of holes in the nitride (SiNx) film dominates the total leakage current. From the P-F plot, the relative dielectric constant of the SiNx was calculated. The electric field inside the structure was also calculated by assuming the model that characterizes the electrode shape inside the tunnel. From the results, the reason why the reliability of the TSSC is not lowered in comparison with the conventional stacked capacitor is discussed.

引用

页码：1340 / 1343

页数：4

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