CREATION OF A NEW IN-BASED MATERIAL BY LASER IRRADIATION OF CHALCOPYRITE-TYPE TERNARY SEMICONDUCTORS

被引：6

作者：

TANINO, H ^{[1
]}

FUJIKAKE, H ^{[1
]}

NAKANISHI, H ^{[1
]}

机构：

[1] SCI UNIV TOKYO,FAC SCI & ENGN,NODA,CHIBA 278,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 06期

关键词：

D O I：

10.1063/1.354475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new material mainly made of In has been created by laser irradiation of chalcopyrite-type ternary semiconductors containing In such as CuInSe2. The Raman spectra of the created material are always the same independent of the original compounds (CuInS2, CuInSe2, CuInTe2, and AgInSe2). The same spectra could not be produced by laser irradiation of CuGaSe2, AgGaSe2, In metal, or Cu-In alloys. The crystallization of a-Si:H was measured by laser irradiation in the same manner and it was found that CuInSe2 was more stable during laser irradiation than a-Si:H. Hence, CuInSe2 could be a promising candidate for solar cells.

引用

页码：3821 / 3823

页数：3