EXCIMER LASER ABLATED BARIUM STRONTIUM-TITANATE THIN-FILMS FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATIONS

被引：145
作者：
ROY, D [1 ]
KRUPANIDHI, SB [1 ]
机构：
[1] PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIV PK,PA 16802
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 10期
关键词：
D O I：
10.1063/1.108793
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Polycrystalline thin films of Ba0.5Sr0.5TiO3 Were deposited by excimer laser (248 nm) ablation. Films deposited near 575-degrees-C exhibited good crystallinity, a dielectric constant of 330, a dissipation factor of 0.02, a leakage current density of 2 X 10(-7) A/cm2, a charge storage density of 36 fC/mum2, and breakdown time of 3700 s at an applied electric field of 0.125 MV/cm. The C-V (capacitance-voltage) behavior of both MFM (metal-ferroelectric-metal) and MFS (metal-ferroelectric-semiconductor) structures were studied and the estimated dielectric permittivity in the accumulation region of MFS structure nearly indicated the bulk value, suggesting a reasonably good Ba0.5Sr0.5TiO3/Si interface.
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页码：1056 / 1058
页数：3
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