SATURATION CAPACITANCE OF THIN OXIDE MOS STRUCTURES AND EFFECTIVE SURFACE DENSITY OF STATES OF SILICON

被引：86

作者：

MASERJIA.J ^{[1
]}

PETERSSO.G ^{[1
]}

SVENSSON, C ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,RES LAB ELECTR,GOTHENBURG,SWEDEN

来源：

关键词：

D O I：

10.1016/0038-1101(74)90125-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：335 / 339

页数：5

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