MIXMOS - A MIXED-LEVEL SIMULATOR FOR DIGITAL MOS CIRCUITS USING A NEW ALGEBRAIC APPROACH

被引:0
|
作者
KONG, JH
SZYGENDA, SA
机构
[1] Electrical and Computer Engineering Department, The University of Texas at Austin, Austin
关键词
ELECTRONIC DESIGN AUTOMATION; SILICON DESIGN; DIGITAL LOGIC SIMULATION; MIXED-LEVEL SIMULATION;
D O I
10.1016/0010-4485(90)90009-2
中图分类号
TP31 [计算机软件];
学科分类号
081202 ; 0835 ;
摘要
The paper presents a new mixed-level simulation tool for digital VLSI circuits implemented in MOS technology. A digital circuit is described as an interconnection of gate-and switch-level models. A new algebraic structure, comprised of algebras for the gate and switch levels, is developed to achieve consistency and accuracy between the two different levels of abstraction. Based on these algebras two evaluation algorithms - one for the gate level and the other for the switch level - are developed to handle Boolean expressions and switch-level descriptions, with the strength capability that is usually needed to simulate MOS circuits. The combination of the two algorithms results in a mixed-level MOS simulator, MixMOS, which achieves switch-level accuracy with performance that approaches that achieved by gate-level simulators.
引用
收藏
页码:618 / 632
页数:15
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