共 50 条
- [31] COMPENSATION, BY DEEP-LEVEL IMPURITIES, OF HIGH-RESISTIVITY EPITAXIAL FILMS OF GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (01): : 119 - &
- [32] IMPEDANCE OF HIGH-RESISTIVITY GALLIUM ARSENIDE SAMPLES WITH NONLINEAR CURRENT-VOLTAGE CHARACTERISTICS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (01): : 57 - +
- [34] TEMPERATURE DEPENDENCE OF PHOTO-HALL EFFECTS IN HIGH-RESISTIVITY GALLIUM ARSENIDE .2. 2-CARRIER EFFECTS PHYSICAL REVIEW, 1962, 128 (05): : 2071 - &
- [35] ELECTRO-OPTICAL PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE AT LAMBDA=10.6MU SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (07): : 1175 - +
- [37] INFLUENCE OF THE ORIENTATION OF A CRYSTAL AND OF THE FREE CARRIER DENSITY IN THE SUBSTRATE ON THE PARAMETERS OF HIGH-RESISTIVITY GALLIUM-ARSENIDE LAYERS FORMED BY IRRADIATION WITH ARGON IONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (09): : 1079 - 1080
- [39] OSCILLATIONS OF CURRENT IN DIODE STRUCTURES MADE OF TI-COMPENSATED HIGH-RESISTIVITY GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (04): : 546 - +