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- [11] AN INVESTIGATION OF INHOMOGENEITY OF IRON-DOPED GALLIUM ARSENIDE CRYSTALS SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1970, 15 (01): : 90 - &
- [12] PROPERTIES OF IRON-DOPED SEMIINSULATING GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 311 - 316
- [14] NEGATIVE DIFFERENTIAL CONDUCTANCE OF ILLUMINATED HIGH-RESISTIVITY GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (06): : 939 - &
- [16] PHOTOGRAPHIC PROCESS BASED ON USE OF HIGH-RESISTIVITY GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1565 - &
- [17] MAGNETIC-SUSCEPTIBILITY OF IRON-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1083 - 1084
- [19] SEMICONDUCTOR PHOTOGRAPHIC SYSTEM BASED ON HIGH-RESISTIVITY GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (09): : 1585 - 1587
- [20] SOME INVESTIGATIONS OF ELECTRICAL PROPERTIES AND INJECTION CONDUCTIVITY OF HIGH-RESISTIVITY NICKEL-DOPED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 810 - +