共 50 条
- [1] INJECTION BREAKDOWN IN HIGH-RESISTIVITY GALLIUM ARSENIDE DOPED WITH IRON AND CHROMIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1440 - +
- [2] INVESTIGATION OF OPTICAL ABSORPTION SPECTRA OF HIGH-RESISTIVITY GALLIUM ARSENIDE DOPED WITH IRON OR NICKEL SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (06): : 1086 - +
- [3] SOME PROPERTIES OF TITANIUM-DOPED HIGH-RESISTIVITY GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (05): : 853 - &
- [4] PHOTOACOUSTIC SPECTRA OF HIGH-RESISTIVITY GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1126 - &
- [5] ON DEEP ACCEPTORS IN IRON-DOPED GALLIUM ARSENIDE PHYSICA STATUS SOLIDI, 1967, 21 (01): : K91 - +
- [7] INVESTIGATION OF SOME PROPERTIES OF IRON-DOPED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (06): : 713 - +
- [8] MAGNETIC PROPERTIES OF IRON-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 299 - 300
- [10] DEEP LEVELS IN SEMIINSULATING IRON-DOPED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (02): : 316 - +