EPITAXIAL-GROWTH OF FERROMAGNETIC CRO2 FILMS IN AIR

被引：51

作者：

ISHIBASHI, S

NAMIKAWA, T

SATOU, M

机构：

[1] The Graduate School at Nagatsuta, Tokyo Institute of Technology, Nagatsuta, Yokohamashi

来源：

MATERIALS RESEARCH BULLETIN | 1979年 / 14卷 / 01期

关键词：

D O I：

10.1016/0025-5408(79)90231-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial growth of CrO2 films under atmospheric pressure has been investigated. Single crystal films of CrO2 were obtained by the thermal decomposition of gaseous CrO3 onto the substrates of rutile single crystals in air. The optimum temperature of the substrate for the pure CrO2 epitaxial films was found to be 390°C. At the substrate temperature of 380°C, the obtained film included Cr2O5 as impurities, and Cr2O3 appeared at 400°C. Magnetic domain patterns of these films were observed by longitudinal Kerr effect. The growth patterns of domain were obtained with applied field. © 1979.

引用

页码：51 / 57

页数：7

共 11 条

[1] CRYSTAL GROWTH OF CR02 [J].

CHAMBERL.BL .

MATERIALS RESEARCH BULLETIN, 1967, 2 (09) :827-&

[2]

Devries RC, 1966, MAT RES B, V1, P83

[3]

ELBINGER G, 1973, Patent No. 100638

[4]

HICKS WH, 1970, Patent No. 3493338

[5]

HIROTA E, 1974, 20 NAT TECHN REP, P639

[6] EPITAXIAL-GROWTH OF CRO2 ON SAPPHIRE IN AIR [J].

ISHIBASHI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (01) :249-250

[7]

Ishibashi S., 1976, AIP Conference Proceedings, P43, DOI 10.1063/1.2946151

[8]

Michel A, 1935, CR HEBD ACAD SCI, V200, P1316

[9]

MURATA H, 1975, Patent No. 20039

[10] ELECTRICAL RESISTIVITY OF SINGLE CRYSTAL CRO2 [J].

RODBELL, DS ;

LOMMEL, JM ;

DEVRIES, RC .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (11) :2430-&

← 1 2 →