THE GROWTH OF STRAINED INGAAS ON GAAS - KINETICS VERSUS ENERGETICS

被引:49
作者
WHALEY, GJ
COHEN, PI
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期
关键词
D O I
10.1116/1.584416
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:625 / 626
页数:2
相关论文
共 50 条
  • [41] ON THE BAND-GAP OF INGAAS/GAAS STRAINED QUANTUM WELLS
    WOODHEAD, J
    SANZ, FG
    CLAXTON, PA
    DAVID, JPR
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) : 601 - 604
  • [42] Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001)
    Pristovsek, Markus
    Kremzow, Raimund
    Kneissl, Michael
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
  • [43] NUCLEATION OF MISFIT DISLOCATIONS IN STRAINED-LAYER INGAAS ON GAAS
    GREEN, GS
    TANNER, BK
    BARNETT, SJ
    EMENY, M
    PITT, AD
    WHITEHOUSE, CR
    CLARK, GF
    PHILOSOPHICAL MAGAZINE LETTERS, 1990, 62 (03) : 131 - 137
  • [44] Electrooptical Properties of InGaAs/GaAs Strained Single Quantum Wells
    Lu, Chien-Rong
    Lou, Shry-Fong
    Cheng, Hung-Hsiang
    Lee, Chien-Ping
    Tsai, Fu-Yi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2000, 39 (01) : 351 - 352
  • [45] LEAKAGE CURRENT MECHANISMS IN STRAINED INGAAS/GAAS MQW STRUCTURES
    DAVID, JPR
    KIGHTLEY, P
    CHEN, YH
    GOH, TS
    GREY, R
    HILL, G
    ROBSON, PN
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 373 - 378
  • [46] Photovoltaic spectroscopy studies of strained InGaAs GaAs quantum wells
    Wu, ZY
    Wang, XJ
    Huang, QS
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1999, 213 (02): : 343 - 348
  • [47] ANOMALOUS ION CHANNELING EFFECTS IN INGAAS/GAAS STRAINED HETEROJUNCTIONS
    WU, CW
    YIN, SD
    ZHANG, JP
    XIAO, GM
    LIU, JR
    ZHU, PR
    CHINESE PHYSICS, 1990, 10 (01): : 55 - 62
  • [48] OPTICAL INVESTIGATIONS OF STRAINED INGAAS/GAAS SINGLE QUANTUM WELLS
    ARENT, DJ
    DENEFFE, K
    VANHOOF, C
    DEBOECK, J
    BORGHS, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C378 - C379
  • [49] Minibands modeling in strained balanced InGaAs/GaAs/GaAsP cells
    Galvani, Benoit
    Michelini, Fabienne
    Bescond, Marc
    Sugiyama, Masakazu
    Guillemoles, Jean-Francois
    Cavassilas, Nicolas
    PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES VI, 2017, 10099
  • [50] LOW LEAKAGE INGAAS/GAAS STRAINED LAYER MQWPIN STRUCTURES
    DAVID, JPR
    WOLSTENHOLME, AR
    CLAXTON, PA
    GREY, R
    WOODHEAD, J
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 56 - 56