THE GROWTH OF STRAINED INGAAS ON GAAS - KINETICS VERSUS ENERGETICS

被引：49

作者：

WHALEY, GJ

COHEN, PI

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：625 / 626

页数：2

共 9 条

[1]

Ball C., 1983, DISLOCATIONS SOLIDS, P123

[2] A STUDY OF STRAIN-RELATED EFFECTS IN THE MOLECULAR-BEAM EPITAXY GROWTH OF INXGA1-XAS ON GAAS USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

BERGER, PR ;

CHANG, K ;

BHATTACHARYA, PK ;

SINGH, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1162-1166

[3] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF EPITAXIAL-GROWTH ON SEMICONDUCTOR SURFACES [J].

COHEN, PI ;

PUKITE, PR ;

VANHOVE, JM ;

LENT, CS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1251-1258

[4] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[5] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].

PEOPLE, R ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :322-324

[6] DIFFRACTION FROM STEPPED SURFACES .2. ARBITRARY TERRACE DISTRIBUTIONS [J].

PUKITE, PR ;

LENT, CS ;

COHEN, PI .

SURFACE SCIENCE, 1985, 161 (01) :39-68

[7] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GEXSI1-X MBE GROWTH ON SI(001) SUBSTRATES [J].

SAKAMOTO, K ;

SAKAMOTO, T ;

NAGAO, S ;

HASHIGUCHI, G ;

KUNIYOSHI, K ;

BANDO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (05) :666-670

[8]

WHALEY GJ, 1986, B AM PHYS SOC, V31, P52

[9]

WHALEY GJ, 1987, THESIS U MINNESOTA M

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