METALORGANIC VAPOR-PHASE EPITAXY OF THE TERNARY SOLID-SOLUTIONS GA1-XALXSB, GA1-XINXSB AND GAASYSB1-Y ON GASB SUBSTRATES

被引：8
作者：
BOUGNOT, G
BOUGNOT, J
DELANNOY, F
FOUCARAN, A
GROSSE, P
MARJAN, M
PASCAL, F
ROUMANILLE, F
机构：
来源：
REVUE DE PHYSIQUE APPLIQUEE | 1987年 / 22卷 / 08期
关键词：
D O I：
10.1051/rphysap:01987002208083700
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：837 / 844
页数：8
相关论文
共 27 条
[1]   GROWTH OF GAAS(1-X)SBX BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
BEDAIR, SM ;
TIMMONS, ML ;
CHIANG, PK ;
SIMPSON, L ;
HAUSER, JR .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (06) :959-972
[2]   THE PREPARATION OF INAS1-XSBX ALLOYS AND STRAINED-LAYER SUPERLATTICES BY MOCVD [J].
BIEFELD, RM .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :392-399
[3]   GROWTH OF GA1-XALXSB AND GA1-XINXSB BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].
BOUGNOT, GJ ;
FOUCARAN, AF ;
MARJAN, M ;
ETIENNE, D ;
BOUGNOT, J ;
DELANNOY, FMH ;
ROUMANILLE, FM .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :400-407
[4]   GAAS1-XSBX GROWTH BY OMVPE [J].
CHERNG, MJ ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (05) :799-813
[5]   ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5 [J].
CHERNG, MJ ;
STRINGFELLOW, GG ;
COHEN, RM .
APPLIED PHYSICS LETTERS, 1984, 44 (07) :677-679
[6]   GAINASSB METASTABLE ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
CHERNG, MJ ;
STRINGFELLOW, GB ;
KISKER, DW ;
SRIVASTAVA, AK ;
ZYSKIND, JL .
APPLIED PHYSICS LETTERS, 1986, 48 (06) :419-421
[7]   MOLECULAR-BEAM EPITAXY OF GASB0.5AS0.5 AND ALXGA1-XSBYAS1-Y LATTICE MATCHED TO INP [J].
CHIU, TH ;
TSANG, WT ;
CHU, SNG ;
SHAH, J ;
DITZENBERGER, JA .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :408-410
[8]   INSTABILITY CRITERIA IN TERNARY AND QUATERNARY-III-V EPITAXIAL SOLID-SOLUTIONS [J].
DECREMOUX, B .
JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :19-27
[9]   LIQUID-PHASE EPITAXIAL GA1-XINXASYSB1-Y LATTICE-MATCHED TO (100) GASB OVER THE 1.71-MU-M 2.33-MU-M WAVELENGTH RANGE [J].
DEWINTER, JC ;
POLLACK, MA ;
SRIVASTAVA, AK ;
ZYSKIND, JL .
JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (06) :729-747
[10]  
Dolginov L. M., 1978, Soviet Journal of Quantum Electronics, V8, DOI 10.1070/QE1978v008n03ABEH010046
123