PREPARATION OF EPITAXIAL GAAS AND GAP FILMS BY VAPOR PHASE REACTION

[1] PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) : 509 - 511

[2] PREPARATION OF INAS, INP, GAAS, AND GAP BY CHEMICAL METHODS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) : 252 - 253

[3] FROSCH CJ, 1961, J ELECTROCHEM SOC, V108, pC177

[4] GUNTHER KG, 1961, Z NATURFORSCH PT A, V16, P279

[5] HAGENLOCHER A, 1961, J ELECTROCHEM SOC, V108, pC213

[6] HOLONYAK N, 1961, AUG AIME TECHN C LOS

[7] LYONS VJ, 1961, J ELECTROCHEM SOC, V108, pC177

[8] NEWMAN RL, 1961, J ELECTROCHEM SOC, V108, P127

[9] PRESNOV VA, 1957, SOVIET PHYSICS TECHN, V2

[10] SULLIVAN MV, 1961, J ELECTROCHEM SOC, V108, pC60

[1] PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) : 509 - 511

[2] PREPARATION OF INAS, INP, GAAS, AND GAP BY CHEMICAL METHODS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) : 252 - 253

[3] FROSCH CJ, 1961, J ELECTROCHEM SOC, V108, pC177

[4] GUNTHER KG, 1961, Z NATURFORSCH PT A, V16, P279

[5] HAGENLOCHER A, 1961, J ELECTROCHEM SOC, V108, pC213

[6] HOLONYAK N, 1961, AUG AIME TECHN C LOS

[7] LYONS VJ, 1961, J ELECTROCHEM SOC, V108, pC177

[8] NEWMAN RL, 1961, J ELECTROCHEM SOC, V108, P127

[9] PRESNOV VA, 1957, SOVIET PHYSICS TECHN, V2

[10] SULLIVAN MV, 1961, J ELECTROCHEM SOC, V108, pC60