AMORPHOUS DIAMOND-LIKE CARBON-SILICON HETEROJUNCTION DEVICES FORMED BY ION-IMPLANTATION

Amorphous carbon films grown onto silicon substrates and characterized as diamondlike have been ion implanted with boron and nitrogen to achieve p-type and n-type conductivity, respectively. Energies of 120 keV were used for the ion implantation. After isothermal heat treatment, the films revealed diode characteristics for both p-carbon/n-carbon and n-carbon/p-silicon structures. Current-voltage characteristics and capacitance-voltage curves show that the devices performed as heterojunctions between the carbon and the silicon. The difference between the currents for reverse and forward bias were as high as six orders of magnitude.