STANDARD THERMODYNAMIC FUNCTIONS FOR FORMATION OF ELECTRONS AND HOLES IN GE, SI, GAAS, AND GAP

被引：575

作者：

THURMOND, CD ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1149/1.2134410

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1133 / 1141

页数：9

共 40 条

[1] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON
BARBER, HD
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &
[2] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P64
[3] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON
BLUDAU, W
ONTON, A
HEINKE, W
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1846 - 1848
[4] Brooks H., 1955, ADV ELECTRON, V7, P85
[5] CASEY HC, 1973, ATOMIC DIFFUSION SEM, P422
[6] INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE
DEAN, PJ
THOMAS, DG
[J]. PHYSICAL REVIEW, 1966, 150 (02): : 690 - &
[7] DENBIGH K, 1971, PRINCIPLES CHEMICAL, P133
[8] THE HEAT CAPACITY OF PURE SILICON AND GERMANIUM AND PROPERTIES OF THEIR VIBRATIONAL FREQUENCY SPECTRA
FLUBACHER, P
LEADBETTER, AJ
MORRISON, JA
[J]. PHILOSOPHICAL MAGAZINE, 1959, 4 (39): : 273 - 292
[9] Fowler R H, 1936, STATISTICAL MECHANIC
[10] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT
GLASSBRENNER, CJ
SLACK, GA
[J]. PHYSICAL REVIEW, 1964, 134 (4A): : 1058 - +