Effect of praseodymium doping on electroresistivity along c-axis in Y1-xPrxBa2Cu3O7-delta single crystals

被引:0
|
作者
Vovk, R. V. [1 ]
Vovk, N. R. [1 ]
Samoilov, A., V [2 ]
机构
[1] V Karazin Kharkiv Natl Univ, 4 Svoboda Sq, UA-61022 Kharkov, Ukraine
[2] Ukrainian State Acad Railway Transport, UA-61050 Kharkov, Ukraine
来源
FUNCTIONAL MATERIALS | 2013年 / 20卷 / 04期
关键词
D O I
10.15407/fm20.04.457
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present study influence of praseodymium doping on conductivity across (transverse) the basal plane of high-temperature superconducting Y1-xPrxBa2Cu2O7-delta single crystals is investigated. It is determined that increase of praseodymium doping leads to increased localization effects and implementation of the metal - insulator transitionY(1-x)Pr(x)Ba(2)Cu(3)O(7)(-)(delta), which always precedes the superconducting transition. The praseodymium concentration increase also leads to significant displacement of the point of the metal - insulator transition to the low temperature region.
引用
收藏
页码:457 / 461
页数:5
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