CHARACTERIZATION OF ELECTRONIC DEVICES AND MATERIALS BY SURFACE-SENSITIVE ANALYTICAL TECHNIQUES

被引:21
作者
HOLLOWAY, PH [1 ]
MCGUIRE, GE [1 ]
机构
[1] TEKTRONIX INC, MAT CHARACTERIZAT LAB, PORTLAND, OR 97077 USA
来源
APPLICATIONS OF SURFACE SCIENCE | 1980年 / 4卷 / 3-4期
关键词
D O I
10.1016/0378-5963(80)90088-4
中图分类号
学科分类号
摘要
引用
收藏
页码:410 / 444
页数:35
相关论文
共 437 条
[1]  
Abe T., 1975, Journal of the Vacuum Society of Japan, V18, P375, DOI 10.3131/jvsj.18.375
[2]   STUDY OF OXIDATION OF TANTALUM NITRIDE BY ELLIPSOMETRY AND AUGER-ELECTRON SPECTROSCOPY [J].
ADAMS, JR ;
KRAMER, DK .
SURFACE SCIENCE, 1976, 56 (01) :482-487
[3]   COMPLEX REFRACTIVE-INDEX AND PHOSPHORUS CONCENTRATION PROFILES IN P-31(+) ION-IMPLANTED SILICON BY ELLIPSOMETRY AND AUGER-ELECTRON SPECTROSCOPY [J].
ADAMS, JR .
SURFACE SCIENCE, 1976, 56 (01) :307-315
[4]   ELECTRON-BEAM EFFECTS IN DEPTH PROFILING MEASUREMENTS WITH AUGER-ELECTRON SPECTROSCOPY [J].
AHN, J ;
PERLEBERG, CR ;
WILCOX, DL ;
COBURN, JW ;
WINTERS, HF .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4581-4583
[5]   SURFACE SEGREGATION OF ALKALINE IMPURITIES IMPLANTED IN GALLIUM-ARSENIDE [J].
ALEXANDRE, F .
JOURNAL DE PHYSIQUE, 1978, 39 (06) :701-710
[6]  
ALLIE G, 1971, CR ACAD SCI B PHYS, V273, P395
[7]   BAND STRUCTURE OF SILICON BY CHARACTERISTIC AUGER ELECTRON SPECTRUM ANALYSIS [J].
AMELIO, GF .
SURFACE SCIENCE, 1970, 22 (02) :301-&
[8]   SMOOTH AND CONTINUOUS OHMIC CONTACTS TO GAAS USING EPITAXIAL GE FILMS [J].
ANDERSON, WT ;
CHRISTOU, A ;
DAVEY, JE .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2998-3000
[9]   DETECTION OF AL AND MG CONTAMINATION IN SPUTTERED PT FILMS BY AUGER-ELECTRON SPECTROSCOPY AND SECONDARY ION MASS-SPECTROMETRY [J].
ANDREWS, JM ;
MORABITO, JM .
THIN SOLID FILMS, 1976, 37 (03) :357-372
[10]  
Arakelov A. G., 1975, Ukrayins'kyi Fizychnyi Zhurnal, V20, P30