HOT FILAMENT ENHANCED CHEMICAL VAPOR-DEPOSITION OF ALN THIN-FILMS

被引：29

作者：

DUPUIE, JL

GULARI, E

机构：

[1] Department of Chemical Engineering, University of Michigan, Ann Arbor

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 05期

关键词：

D O I：

10.1063/1.105410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hot filament enhanced chemical vapor deposition of aluminum nitride thin films from trimethylaluminum and ammonia has been investigated for deposition temperatures ranging from 584 to 732 K. The use of a hot filament resulted in an approximate two orders of magnitude increase in the deposition rate compared to a similar, uncatalyzed growth. The film deposition rate and refractive index did not depend on the substrate temperature. X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy indicated that the films were high purity aluminum nitride, with negligible carbon and oxygen contamination.

引用

页码：549 / 551

页数：3

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