CRITICAL-EVALUATION OF THE STATUS OF THE AREAS FOR FUTURE-RESEARCH REGARDING THE WIDE BAND-GAP SEMICONDUCTORS DIAMOND, GALLIUM NITRIDE AND SILICON-CARBIDE

被引:220
作者
DAVIS, RF
SITAR, Z
WILLIAMS, BE
KONG, HS
KIM, HJ
PALMOUR, JW
EDMOND, JA
RYU, J
GLASS, JT
CARTER, CH
机构
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1988年 / 1卷 / 01期
关键词
D O I
10.1016/0921-5107(88)90032-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:77 / 104
页数:28
相关论文
共 121 条
[1]   ION IMPLANTATION EFFECTS OF NITROGEN, BORON, AND ALUMINUM IN HEXAGONAL SILICON-CARBIDE [J].
ADDAMIANO, A ;
ANDERSON, GW ;
LUCKE, W ;
COMAS, J ;
HUGHES, HL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) :1355-+
[2]   CHEMICALLY-FORMED BUFFER LAYERS FOR GROWTH OF CUBIC SILICON-CARBIDE ON SILICON SINGLE-CRYSTALS [J].
ADDAMIANO, A ;
KLEIN, PH .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :291-294
[3]  
ADONIN AS, 1981, INORG MATER+, V17, P1187
[4]   PLANAR WAVEGUIDES BASED ON EPITAXIAL FILMS OF GaAsP AND GaN FOR INTEGRATED OPTICS APPLICATIONS. [J].
Andreev, V.M. ;
Bykovskii, Yu.A. ;
Vigdorovich, E.N. ;
Makovkin, A.V. ;
Oplesnin, V.L. ;
Plavich, L.F. ;
Smirnov, V.L. ;
Shmal'ko, A.V. .
1978, 8 (01) :73-75
[5]  
Andreev V. M., 1978, Soviet Technical Physics Letters, V4, P258
[6]   DOPING MECHANISM AND PROPERTIES OF ZN-DOPED GAN-EPITAXIAL LAYERS [J].
ANDREEV, VM ;
PETROV, MN ;
PICHUGIN, IG .
CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (04) :435-444
[7]   GROWTH OF GAN THIN-FILMS FROM TRIETHYLGALLIUM MONAMINE [J].
ANDREWS, JE ;
LITTLEJOHN, MA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :1273-1275
[8]  
Bartlett R. W., 1969, MATER RES B, V4, pS341
[9]   RECTIFICATION, PHOTOCONDUCTIVITY, AND PHOTOVOLTAIC EFFECT IN SEMICONDUCTING DIAMOND [J].
BELL, MD ;
LEIVO, WJ .
PHYSICAL REVIEW, 1958, 111 (05) :1227-1231
[10]  
BERMAN I, 1972, AFCRL720737 REP