THE PROPERTIES OF LONG WAVELENGTH STRAINED LAYER SUPERLATTICE LASERS GROWN BY MOVPE

被引：14
作者：
MONSERRAT, KJ
TOTHILL, JN
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 04期
关键词：
D O I：
10.1007/BF02657775
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：475 / 480
页数：6
相关论文
共 15 条
[1]   BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].
ADAMS, AR .
ELECTRONICS LETTERS, 1986, 22 (05) :249-250
[2]   THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J].
ADAMS, AR ;
ASADA, M ;
SUEMATSU, Y ;
ARAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L621-L624
[3]  
Agrawal G., 1986, LONG WAVELENGTH SEMI
[4]   THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y [J].
DUTTA, NK ;
NELSON, RJ .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :74-92
[5]  
HALLIWELL MAG, UNPUB
[6]   THE EFFECT OF INTERVALENCE BAND ABSORPTION ON THE THERMAL-BEHAVIOR OF INGAASP LASERS [J].
HENRY, CH ;
LOGAN, RA ;
MERRITT, FR ;
LUONGO, JP .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :947-952
[7]   THE BAND BAND AUGER EFFECT IN SEMICONDUCTORS [J].
LANDSBERG, PT .
SOLID-STATE ELECTRONICS, 1987, 30 (11) :1107-1115
[8]  
MARZIN JY, 1985, HETEROJUNCTIONS SEMI, P161
[9]  
MONSERRAT KJ, 1988, P ICMOVPE, V4
[10]  
MONSERRAT KJ, UNPUB PHYS REV LETT
12