ELECTRICAL-TRANSPORT IN N-TYPE ZNMGSSE GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS

Significant progress in improving the performance of blue-green II-VI semiconductor injection lasers has come about from advances in the epitaxial growth and doping of ZnMgSSe on GaAs substrates. This paper investigates electrical transport and its relation to structural quality in n-type Zn1-yMgySxSe1-x epilayers doped with Cl, grown by molecular beam epitaxy. The composition parameters x and y vary from about 0.12-0.18 and 0.08-0.15, respectively. The quaternary epilayers studied are lattice-matched (or nearly so) to the GaAs substrate. Temperature-dependent Hall-effect measurements are performed on seven n-type ZnMgSSe:Cl epilayers, and a technique is presented whereby the resulting mobility-vs-temperature data is compared with data for ZnSe to obtain a structural figure of merit that is useful in characterizing the quaternary epilayer.