Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs

被引：5

作者：

Mitin, D. M. ^{[1
]}

Soldatenkov, F. Yu. ^{[1
]}

Mozharov, A. M. ^{[2
]}

Vasil'ev, A. A. ^{[2
]}

Neplokh, V. V. ^{[2
]}

Mukhin, I. S. ^{[2
,3
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, Politekhn Skaya, St Petersburg 194021, VA, Russia

[2] Russian Acad Sci, St Petersburg Natl Res Acad Univ, Khlopina,8,Bldg 3,Lit, St Petersburg 194021, Russia

[3] St Petersburg Natl Res Univ Informat Technol Mech, Kronverkskiy,49, St Petersburg 197101, Russia

来源：

NANOSYSTEMS-PHYSICS CHEMISTRY MATHEMATICS | 2018年 / 9卷 / 06期

基金：

俄罗斯科学基金会;

关键词：

GaAs; ohmic contact; contact resistivity; thermal annealing; solid-phase regrowth;

D O I：

10.17586/2220-8054-2018-9-6-789-792

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the results of research for the Pd/Ge/Au ohmic contact resistivity to n-GaAs thermally treated in various gas atmospheres at low temperature. The lowest contact resistivity of about 4 . 10(-6) Omega.cm(2) was obtained with annealing under a hydrogen atmosphere. The mechanism of the ohmic contact formation upon annealing under a hydrogen atmosphere has been proposed. The achieved results can be used for development of multi-junction solar cells, power semiconductor devices, lasers, and nanowire-based structures sensible to a high temperature treatment.

引用

页码：789 / 792

页数：4

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