DECAY OF CHARGE DEPOSITED ON THE WALL OF A GASEOUS VOID

被引：39

作者：

MCALLISTER, IW

机构：

[1] Electric Power Engineering Department, Technical University of Denmark, Lyngby

来源：

IEEE TRANSACTIONS ON ELECTRICAL INSULATION | 1992年 / 27卷 / 06期

关键词：

D O I：

10.1109/14.204872

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Following partial discharge activity within a gaseous void, charges will accumulate on the wall of the void. In the present paper, the decay of such charges due to surface currents at the void wall is studied analytically, and the factors affecting this decay are indicated.

引用

页码：1202 / 1207

页数：6