CHEMICAL ETCHING OF INDIUM NITRIDE

被引：37

作者：

GUO, QX ^{[1
]}

KATO, O ^{[1
]}

YOSHIDA, A ^{[1
]}

机构：

[1] INST MOLEC SCI,OKAZAKI,AICHI 444,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 07期

关键词：

D O I：

10.1149/1.2221165

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Indium nitride epitaxial layers were grown by microwave-excited metalorganic vapor phase epitaxy. Acid solutions are inappropriate for etching the surface of indium nitride, but alkaline etchants, such as aqueous KOH and NaOH solutions, give controllable etching rates. Smooth surfaces free from etch pits are thereby obtained.

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页码：2008 / 2009

页数：2

相关论文

共 10 条

[1] HYDRATION MODEL FOR THE MOLARITY DEPENDENCE OF THE ETCH RATE OF SI IN AQUEOUS ALKALI HYDROXIDES [J].

GLEMBOCKI, OJ ;

PALIK, ED ;

DEGUEL, GR ;

KENDALL, DL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (04) :1055-1063

[2] EVALUATION OF A NEW PLASMA SOURCE FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF INN AND GAN FILMS [J].

HOKE, WE ;

LEMONIAS, PJ ;

WEIR, DG .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :1024-1028

[3] ELECTRONIC-STRUCTURES AND DOPING OF INN, INXGA1-XN, AND INXAL1-XN [J].

JENKINS, DW ;

DOW, JD .

PHYSICAL REVIEW B, 1989, 39 (05) :3317-3329

[4] Crystal structures of Cu3N, GaN and InN - Metallic amides and metallic nitrides V Announcement [J].

Juza, R ;

Hahn, H .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1938, 239 (03) :282-287

[5] PREPARATION AND PROPERTIES OF III-V NITRIDE THIN-FILMS [J].

KUBOTA, K ;

KOBAYASHI, Y ;

FUJIMOTO, K .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) :2984-2988

[6]

SANGWALL K, 1987, ETCHING CRYSTALS THE, pCH5

[7] GROWTH OF INN ON GAAS SUBSTRATES BY THE REACTIVE EVAPORATION METHOD [J].

SATO, Y ;

SATO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (09) :L1641-L1643

[8] OPTICAL BAND-GAP OF INDIUM NITRIDE [J].

TANSLEY, TL ;

FOLEY, CP .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3241-3244

[9] HETEROEPITAXIAL GROWTH OF INN BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J].

WAKAHARA, A ;

YOSHIDA, A .

APPLIED PHYSICS LETTERS, 1989, 54 (08) :709-711

[10] EPITAXIAL-GROWTH OF INDIUM NITRIDE [J].

WAKAHARA, A ;

TSUCHIYA, T ;

YOSHIDA, A .

JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) :385-389