SELECTIVE ETCHING AND DISSOLUTION OF BAF2 CRYSTALS

被引：8

作者：

SMIRNOV, AE

URUSOVSKAYA, AA

机构：

来源：

JOURNAL OF MATERIALS SCIENCE | 1980年 / 15卷 / 05期

关键词：

D O I：

10.1007/BF00551807

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1183 / 1188

页数：6

共 11 条

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[2]

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[4]

LAIDER KJ, 1950, CHEM KINETICS

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LI, CH .

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[6]

Patel A. R., 1968, Journal of Crystal Growth, V2, P373, DOI 10.1016/0022-0248(68)90031-6

[7] DISPLAY OF IMPURITY PRECIPITATION AT DISLOCATIONS IN BAF2 BY SELECTIVE ETCH METHOD [J].

PATEL, AR ;

SINGH, RP .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1969, 2 (03) :319-&

[8] ETCHING OF MGO CRYSTALS IN ACIDS - KINETICS AND MECHANISM OF DISSOLUTION [J].

SANGWAL, K ;

ARORA, SK .

JOURNAL OF MATERIALS SCIENCE, 1978, 13 (09) :1977-1985

[9]

SMIRNOV AE, 1978, KRISTALLOGRAFIYA+, V23, P434

[10]

URUSOVSKAYA AA, 1963, KRISTALLOGRAFIYA, V8, P75

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