CATION SITE ORDERING AND CONDUCTION ELECTRON-SCATTERING IN GAINP2

被引:35
作者
FRIEDMAN, DJ
KIBBLER, AE
OLSON, JM
机构
关键词
D O I
10.1063/1.105823
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present Hall mobility data mu(T) in the range T = 300-600 K for GaInP2, an alloy whose band gap has been shown to decrease with increasing compositional ordering. Samples grown to give high ordering are found to have consistently lower mobilities than samples with low ordering, suggesting that the mobility is limited by cluster scattering by ordered domains. We analyze mu(T) in terms of a cluster scattering model developed by Marsh [Appl. Phys. Lett. 41, 732 (1982)] and others to estimate the relative volume fraction of cluster scattering sites in the ordered and disordered material.
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页码:2998 / 3000
页数:3
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共 15 条
[1]   MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792
[2]   EFFECT OF ALLOY CLUSTERING ON THE HIGH-TEMPERATURE ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y [J].
BHATTACHARYA, PK ;
KU, JW .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1410-1411
[3]   LPE AND VPE IN1-XGAXASYP1-Y-INP - TRANSPORT-PROPERTIES, DEFECTS, AND DEVICE CONSIDERATIONS [J].
BHATTACHARYA, PK ;
KU, JW ;
OWEN, SJT ;
OLSEN, GH ;
CHIAO, SH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :150-161
[4]   SURFACE-INDUCED ORDERING IN GAINP [J].
FROYEN, S ;
ZUNGER, A .
PHYSICAL REVIEW LETTERS, 1991, 66 (16) :2132-2135
[5]   OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS [J].
GOMYO, A ;
SUZUKI, T ;
IIJIMA, S .
PHYSICAL REVIEW LETTERS, 1988, 60 (25) :2645-2648
[6]   THEORETICAL CALCULATIONS OF ELECTRON-MOBILITY IN TERNARY 3-5 COMPOUNDS [J].
HARRISON, JW ;
HAUSER, JR .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) :292-300
[7]   ALLOY SCATTERING IN TERNARYIII-V COMPOUNDS [J].
HARRISON, JW ;
HAUSER, JR .
PHYSICAL REVIEW B, 1976, 13 (12) :5347-5350
[8]   NONRANDOM ALLOYING IN IN0.52AL0.48AS/INP GROWN BY MOLECULAR-BEAM EPITAXY [J].
HONG, WP ;
BHATTACHARYA, PK ;
SINGH, J .
APPLIED PHYSICS LETTERS, 1987, 50 (10) :618-620
[9]   SELENIUM AND ZINC DOPING IN GA0.5IN0.5P AND (AL0.5GA0.5)0.5IN0.5P GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
IKEDA, M ;
KANEKO, K .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) :5285-5289
[10]   EFFECT OF GROWTH-RATE ON THE BAND-GAP OF GA0.5IN0.5P [J].
KURTZ, SR ;
OLSON, JM ;
KIBBLER, A .
APPLIED PHYSICS LETTERS, 1990, 57 (18) :1922-1924