REDUCED LIGHT SENSIBILITY IN OPTIMIZED TA2O5-ISFET STRUCTURES

被引：23

作者：

GIMMEL, P

SCHIERBAUM, KD

GOPEL, W

VANDENVLEKKERT, HH

DEROOIJ, NF

机构：

[1] PRIVA,2678 DE LIER ZH,NETHERLANDS

[2] UNIV NEUCHATEL,INST MICROTECHNOL,CH-2000 NEUCHATEL,SWITZERLAND

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1991年 / 4卷 / 1-2期

关键词：

D O I：

10.1016/0925-4005(91)80188-P

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

To reduce light-induced long-term drifts of aTa2O5-based ISFETs (TOSFETs), corresponding gate structures have been investigated using surface and interface analysis techniques (SIMS, XPS, EELS) and luminescence measurements. At an oxidation temperature T(ox) = 1073 K for Ta, SIMS indicates a diffusion of Si into the bulk Ta2O5. By EELS the band gap of Ta2O5 was determined to be E(gap) = 4.4 +/- 0.2 eV. During a gate Al anneal (aluminium on Ta2O5) in an N2 atmosphere, an Al/Ta mixed oxide is formed at the surface. This treatment affects optically active states located in the band gap, thereby causing a reduced light sensibility of the TOSFETs.

引用

页码：135 / 140

页数：6

共 12 条

[1]

BOUSSE LJ, 1982, THESIS TH TWENTE NET

[2] TA2O5-GATES OF PH-SENSITIVE DEVICES - COMPARATIVE SPECTROSCOPIC AND ELECTRICAL STUDIES [J].