X-RAY-DIFFRACTOMETRY OF ALGAAS GAAS SUPERLATTICES AND GAAS IN THE TEMPERATURE-RANGE 5-295-K

被引：10

作者：

CLECH, G ^{[1
]}

CALVARIN, G ^{[1
]}

AUVRAY, P ^{[1
]}

BAUDET, M ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,DEPT MPA,F-22301 LANNION,FRANCE

来源：

JOURNAL OF APPLIED CRYSTALLOGRAPHY | 1989年 / 22卷

关键词：

D O I：

10.1107/S0021889889004607

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：372 / 375

页数：4

共 16 条

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[2] DETERMINATION OF ALUMINUM BY ATOMIC-ABSORPTION SPECTROMETRY AND X-RAY-DIFFRACTION IN GA1-XALXAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
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[3] ORIGINAL HIGHLY ACCURATE GONIOMETER FOR X-RAY-POWDER DIFFRACTION AT CONTROLLED TEMPERATURE
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[5] COMPTON AH, 1954, XRAYS THEORY EXPT, P209
[6] DOUBLE-CRYSTAL SPECTROMETER MEASUREMENTS OF LATTICE-PARAMETERS AND X-RAY TOPOGRAPHY ON HETEROJUNCTIONS GAAS-ALXGA1-XAS
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[7] SOME ASPECTS OF THE X-RAY STRUCTURAL CHARACTERIZATION OF (GA1-XALXAS)N1(GAAS)N2 GAAS(001) SUPERLATTICES
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[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1984, 17 (JUN) : 196 - 205
[8] KERVAREC J, 1983, THESIS U RENNES FRAN
[9] MATTHEWS JW, 1976, EPITAXIAL GROWTH B, P559
[10] COEFFICIENT OF EXPANSION OF GAAS GAP AND GA(AS P) COMPOUNDS FROM -62 DEGREES TO 200 DEGREES C
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[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4669 - &

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