STUDY OF DIFFUSION OF GALLIUM AND ARSENIC IN GERMANIUM AT GALLIUM-ARSENIDE HETEROEPITAXY

被引:0
作者
EPIKTETOVA, LE [1 ]
VASILEVA, LP [1 ]
DRUZHINKIN, IF [1 ]
MOSKOVKIN, VA [1 ]
LAVRENTE.LG [1 ]
机构
[1] TOMSK STATE UNIV, VD KUZNETSOV PHYS TECH INST, TOMSK, USSR
来源
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1973年 / 01期
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中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
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页码:93 / 99
页数:7
相关论文
共 12 条
[1]  
BOLTAKS BI, 1961, DIFFUZIYA POLUPROVOD, P91
[2]  
EPIKTETOVA LE, 1969, 2 VSES S PROTS ROST, P76
[3]   DIFFUSION OF ARSENIC IN GERMANIUM FROM A GERMANIUM ARSENIDE SOURCE - PREDIFFUSION AND DIFFUSION [J].
FOXHALL, GF ;
MILLER, LE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :698-&
[4]  
GLAZOV VM, 1967, FIZIKOKHIMICHESKIE O
[5]   DIFFUSION OF ARSENIC NEAR INTERFACE OF GAAS-GE EPITAXY [J].
ISAWA, N .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (01) :81-&
[6]  
PANTELEEV VA, 1965, FIZ TVERD TELA, V7, P922
[7]  
PAVLOV PV, 1969, DUFFUSION SEMICONDUC, P203
[8]  
REISS H, 1956, BELL SYST TECH J, V35, P536
[9]   SOME CHARACTERISTICS OF GAAS-GE EPITAXY [J].
SCHULZE, RG .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4295-&
[10]  
SHILSHTEIN SS, 1965, KRISTALLOGRAFIYA, V10, P580