THE EFFECT OF THERMAL-TREATMENT ON THE ELECTRICAL-ACTIVITY AND MOBILITY OF DISLOCATIONS IN SI

被引:70
作者
BONDARENKO, IE
EREMENKO, VG
NIKITENKO, VI
YAKIMOV, EB
机构
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1980年 / 60卷 / 02期
关键词
D O I
10.1002/pssa.2210600202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:341 / 349
页数:9
相关论文
共 40 条
[1]  
BARDSLEY W, 1960, PROGR SEMICOND, V4, P1955
[2]  
BONDARENKO IE, 1973, ZH EKSP TEOR FIZ+, V64, P2196
[3]  
BONDARENKO IE, 1976, DOKL AKAD NAUK SSSR+, V229, P1087
[4]   THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS [J].
CELLI, V ;
THOMSON, R ;
KABLER, M ;
NINOMIYA, T .
PHYSICAL REVIEW, 1963, 131 (01) :58-&
[5]  
Eremenko V. G., 1977, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V73, P1129
[6]  
EREMENKO VG, 1977, PISMA ESKP TEOR FIZ, V26, P72
[7]  
EREMENKO VT, 1978, FIZ TEKH POLUPROV, V12, P273
[8]   EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON [J].
EROFEEV, VN ;
NIKITENKO, VI ;
OSVENSKII, VB .
PHYSICA STATUS SOLIDI, 1969, 35 (01) :79-+
[9]  
Erofev V. N., 1971, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V60, P1780
[10]  
GEORGE A, 1972, PHYS STATUS SOLIDI B, V53, P483, DOI 10.1002/pssb.2220530209