AN ION-IMPLANTED TI-W SILICON SCHOTTKY-BARRIER DIODE

被引：0
作者：
LI, SS
KIM, JS
KREPS, SA
机构：
[1] UNIV FLORIDA,GAINESVILLE,FL 32611
[2] HARRIS SEMICOND,MELBOURNE,FL 32901
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 11期
关键词：
D O I：
10.1109/T-ED.1980.20242
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2200 / 2200
页数：1
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