AN ION-IMPLANTED TI-W SILICON SCHOTTKY-BARRIER DIODE

被引：0

作者：

LI, SS

KIM, JS

KREPS, SA

机构：

[1] UNIV FLORIDA,GAINESVILLE,FL 32611

[2] HARRIS SEMICOND,MELBOURNE,FL 32901

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 11期

关键词：

D O I：

10.1109/T-ED.1980.20242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2200 / 2200

页数：1

共 50 条

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