EFFECT OF ADSORBATES AND INSULATING LAYERS ON THE CONDUCTANCE OF PLASMA DEPOSITED A-SI-H

被引：56

作者：

TANIELIAN, M ^{[1
]}

CHATANI, M ^{[1
]}

FRITZSCHE, H ^{[1
]}

SMID, V ^{[1
]}

PERSANS, PD ^{[1
]}

机构：

[1] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 35-6卷 / JAN-期

关键词：

D O I：

10.1016/0022-3093(80)90656-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：575 / 580

页数：6

共 12 条

[1]

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[2]

FRITZSCHE H, 1979, SOLAR ENERGY MATERIA, V3

[3] DETERMINATION OF THE DENSITY OF STATES OF A-SI-H USING THE FIELD-EFFECT [J].

GOODMAN, NB ;

FRITZSCHE, H ;

OZAKI, H .

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[4]

GOODMAN NB, UNPUBLISHED

[5] SLOW SURFACE STATES AND CHEMISORPTION [J].

JANTSCH, O .

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[6]

KNIGHTS JC, UNPUBLISHED

[7] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].

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LECOMBER, PG ;

SPEAR, WE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :239-257

[8]

PERSANS PD, 1979, APS B, V24, P399

[9]

SOLOMON I, 1979, PHYSICS SEMICONDUCTO, P687

[10] EFFECT OF ADSORBED GASES ON CONDUCTANCE OF AMORPHOUS FILMS OF SEMICONDUCTING SILICON-HYDROGEN ALLOYS [J].

TANIELIAN, M ;

FRITZSCHE, H ;

TSAI, CC ;

SYMBALISTY, E .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :353-356

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