CHEMICAL VAPOR-DEPOSITION OF ALUMINUM FROM TRIMETHYLAMINE-ALANE

被引:66
作者
BEACH, DB
BLUM, SE
LEGOUES, FK
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 05期
关键词
D O I
10.1116/1.576322
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:3117 / 3118
页数:2
相关论文
共 9 条
[1]  
BAUM TH, 1989, FAL P MAT RES SOC M, V129
[2]  
CARLEY DR, 1968, Patent No. 3375129
[3]   A REVIEW OF LPCVD METALLIZATION FOR SEMICONDUCTOR-DEVICES [J].
COOKE, MJ .
VACUUM, 1985, 35 (02) :67-73
[4]  
COOKE MJ, 1982, SOLID STATE TECHNOL, V25, P62
[5]   ALUMINIUM HYDRIDE ADDUCTS OF TRIMETHYLAMINE - VIBRATIONAL SPECTRA AND STRUCTURE [J].
FRASER, GW ;
STRAUGHAN, BP ;
GREENWOOD, NN .
JOURNAL OF THE CHEMICAL SOCIETY, 1963, (JUL) :3742-&
[6]   ALUMINUM FILMS PREPARED BY METAL ORGANIC LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].
GREEN, ML ;
LEVY, RA ;
NUZZO, RG ;
COLEMAN, E .
THIN SOLID FILMS, 1984, 114 (04) :367-377
[7]   CHARACTERIZATION OF LPCVD ALUMINUM FOR VLSI PROCESSING [J].
LEVY, RA ;
GREEN, ML ;
GALLAGHER, PK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (09) :2175-2182
[8]  
RUFF JK, 1967, INORG SYNTH, V9, P30
[9]   GAS-TEMPERATURE-CONTROLLED (GTC) CVD OF ALUMINUM AND ALUMINUM-SILICON ALLOY FILM FOR VLSI PROCESSING [J].
SEKIGUCHI, A ;
KOBAYASHI, T ;
HOSOKAWA, N ;
ASAMAKI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2134-L2136