CHEMICAL VAPOR-DEPOSITION OF ALUMINUM FROM TRIMETHYLAMINE-ALANE

[1] BAUM TH, 1989, FAL P MAT RES SOC M, V129

[2] CARLEY DR, 1968, Patent No. 3375129

[3] A REVIEW OF LPCVD METALLIZATION FOR SEMICONDUCTOR-DEVICES [J]. VACUUM, 1985, 35 (02) : 67 - 73

[4] COOKE MJ, 1982, SOLID STATE TECHNOL, V25, P62

[5] ALUMINIUM HYDRIDE ADDUCTS OF TRIMETHYLAMINE - VIBRATIONAL SPECTRA AND STRUCTURE [J]. JOURNAL OF THE CHEMICAL SOCIETY, 1963, (JUL): : 3742 - &

[6] ALUMINUM FILMS PREPARED BY METAL ORGANIC LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J]. THIN SOLID FILMS, 1984, 114 (04) : 367 - 377

[7] CHARACTERIZATION OF LPCVD ALUMINUM FOR VLSI PROCESSING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (09) : 2175 - 2182

[8] RUFF JK, 1967, INORG SYNTH, V9, P30

[9] GAS-TEMPERATURE-CONTROLLED (GTC) CVD OF ALUMINUM AND ALUMINUM-SILICON ALLOY FILM FOR VLSI PROCESSING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2134 - L2136

[1] BAUM TH, 1989, FAL P MAT RES SOC M, V129

[2] CARLEY DR, 1968, Patent No. 3375129

[3] A REVIEW OF LPCVD METALLIZATION FOR SEMICONDUCTOR-DEVICES [J]. VACUUM, 1985, 35 (02) : 67 - 73

[4] COOKE MJ, 1982, SOLID STATE TECHNOL, V25, P62

[5] ALUMINIUM HYDRIDE ADDUCTS OF TRIMETHYLAMINE - VIBRATIONAL SPECTRA AND STRUCTURE [J]. JOURNAL OF THE CHEMICAL SOCIETY, 1963, (JUL): : 3742 - &

[6] ALUMINUM FILMS PREPARED BY METAL ORGANIC LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J]. THIN SOLID FILMS, 1984, 114 (04) : 367 - 377

[7] CHARACTERIZATION OF LPCVD ALUMINUM FOR VLSI PROCESSING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (09) : 2175 - 2182

[8] RUFF JK, 1967, INORG SYNTH, V9, P30

[9] GAS-TEMPERATURE-CONTROLLED (GTC) CVD OF ALUMINUM AND ALUMINUM-SILICON ALLOY FILM FOR VLSI PROCESSING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2134 - L2136