LATTICE IMAGING OF FAULTED DIPOLES IN SILICON

被引：40
作者：
SPENCE, JCH
KOLAR, H
机构：
[1] Department of Physics, Arizona State University, Tempe, AZ
来源：
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1979年 / 39卷 / 01期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1080/01418617908239275
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A lattice image containing an intrinsically faulted Z dislocation dipole in the end-on orientation in silicon has been used to obtain the value γ = 76 ± 12 erg cm−2 for the stacking-fault energy in silicon. © 1979 Taylor & Francis Group, LLC.
引用
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页码：59 / 63
页数：5
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