INTERFACIAL PROPERTIES OF INALAS/INGAAS HIGFETS AND MIS CAPACITORS

被引：3

作者：

LEE, PZ

FAN, C

MEINERS, LG

WIEDER, HH

机构：

[1] Dept. of Electr. and Comp. Eng., California Univ., San Diego, San Diego, CA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 07期

关键词：

D O I：

10.1088/0268-1242/5/7/014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The interfacial properties and characteristics of In0.52Al 0.48As/In0.53Ga0.47As MIS capacitors grown on InP substrates by molecular beam epitaxy and of prototype enhancement-mode heterojunction insulated gate field-effect transistors (HIGFETS) were investigated experimentally. The interface state density distribution within the fundamental band gap is less than 1012 cm-2 eV -1 and the DC transistor characteristics are stable, with drain current drift of 2+or-1% for gate voltages between -0.2 and 0.2 V over a time period of 700 s.

引用

页码：716 / 720

页数：5

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