OBSERVATION OF SIC WITH SI(111)-7 SURFACE STRUCTURE USING HIGH-ENERGY ELECTRON DIFFRACTION

被引：34
作者：
HENDERSON, RC
POLITO, WJ
SIMPSON, J
机构：
来源：
APPLIED PHYSICS LETTERS | 1970年 / 16卷 / 01期
关键词：
D O I：
10.1063/1.1653014
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：15 / +
页数：1
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共 17 条
[1]   SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J].
ABBINK, HC ;
BROUDY, RM ;
MCCARTHY, GP .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4673-&
[2]   CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM [J].
ALLEN, FG ;
EISINGER, J ;
HAGSTRUM, HD ;
LAW, JT .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) :1563-1571
[3]  
ALLEN FG, 1961, J APPL PHYS, V32, P1020
[4]   CARBON CONTAMINATION OF SI(111) SURFACES [J].
CHARIG, JM ;
SKINNER, DK .
SURFACE SCIENCE, 1969, 15 (02) :277-&
[5]   APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].
FARNSWORTH, HE ;
SCHLIER, RE ;
GEORGE, TH ;
BURGER, RM .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1150-1161
[6]   MORPHOLOGICAL CHANGES OF A TUNGSTEN TIP BY SURFACE DIFFUSION FORMATION OF SOLID DROPS [J].
DRECHSLER, M ;
PIQUET, A ;
UZAN, R ;
BINH, VT .
SURFACE SCIENCE, 1969, 14 (02) :457-+
[7]   A NOTE ON SENSITIVITY OF LEED TO SURFACE PERFECTION [J].
JONA, F .
SURFACE SCIENCE, 1967, 8 (04) :478-&
[8]   GROWTH OF SINGLE-CRYSTAL FILMS OF CUBIC SILICON CARBIDE ON SILICON [J].
KHAN, IH ;
SUMMERGRAD, RN .
APPLIED PHYSICS LETTERS, 1967, 11 (01) :12-+
[9]   LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :729-&
[10]   STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].
LANDER, JJ ;
GOBELL, GW ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+
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