MAGNETOSPECTROSCOPY OF SHALLOW DONORS IN GAAS

被引：152

作者：

STILLMAN, GE

WOLFE, CM

DIMMOCK, JO

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 13期

关键词：

D O I：

10.1016/0038-1098(69)90543-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Spectral measurements in the frequency range from 10 to 130 cm-1 in magnetic fields from 0 to 30 kG of the far infrared photoconductivity due to shallow donors in GaAs are reported. The measurements reveal peaks due to the isolated (1s→ 2p) and (1s→ 3p) transitions in addition to a broad continuum at higher energy. From the energy of these peak transitions and their splitting in a magnetic field we obtain a donor ionization energy of 5.86 ± 0.02 meV and an effective mass of0.0665 ± .0005 m0. © 1969.

引用

页码：921 / &

共 10 条

[1]

BOSOMWORTH AR, 1968, PHYS LETT A, V28, P320

[2]

HASEGAWA H, 1961, PHYS CHEM SOLIDS, V21, P179

[3]

HILSUM C, 1961, SEMICONDUCTING 3 5 C, P181

[4]

KOGAN SM, 1967, SOV PHYS-SOLID STATE, V8, P1898

[5]

LARSEN DM, 1968, PHYSICS CHEM SOLIDS, V29, P271

[6]

LIFSHITS TM, 1965, SOV PHYS DOKL, V10, P532

[7]

LOH E, 1962, B AM PHYS SOC, V7, P173

[8] 2 TYPES OF FAR-INFRARED PHOTOCONDUCTIVITY IN ANTIMONY-DOPED GERMANIUM [J].

NAGASAKA, K ;

NARITA, S .

SOLID STATE COMMUNICATIONS, 1969, 7 (05) :467-+

[9]

PILLER H, 1966, J PHYS SOC JPN, VS 21, P206

[10] FAR-INFRARED PHOTOCONDUCTIVITY IN HIGH-PURITY EPITAXIAL GAAS [J].

STILLMAN, GE ;

WOLFE, CM ;

MELNGAILIS, I ;

PARKER, CD ;

TANNENWALD, PE ;

DIMMOCK, JO .

APPLIED PHYSICS LETTERS, 1968, 13 (03) :83-+

← 1 →