HOPPING CONDUCTION AND DEFECT STATES IN REACTIVELY SPUTTERED SILICON-NITRIDE THIN-FILMS

被引：8
作者：
GIER, L
SCHARMANN, A
SCHALCH, D
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 98卷 / 02期
关键词：
D O I：
10.1002/pssa.2210980234
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：605 / 610
页数：6
相关论文
共 13 条
[1]  
GUNKEL C, 1983, P S SILICON NITRIDE, V8, P461
[2]   DC AND AC CONDUCTIVITY IN HOPPING ELECTRONIC SYSTEMS [J].
HILL, RM ;
JONSCHER, AK .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :53-69
[3]   CHARGE TRANSPORT IN BAND TAILS [J].
HILL, RM .
THIN SOLID FILMS, 1978, 51 (02) :133-140
[4]   ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY [J].
KARCHER, R ;
LEY, L ;
JOHNSON, RL .
PHYSICAL REVIEW B, 1984, 30 (04) :1896-1910
[5]  
Kern W., 1985, Semiconductor International, V8, P121
[6]   TEMPERATURE AND THICKNESS DEPENDENCE OF LOW-TEMPERATURE TRANSPORT IN AMORPHOUS SILICON THIN-FILMS - COMPARISON TO AMORPHOUS-GERMANIUM [J].
KNOTEK, ML .
SOLID STATE COMMUNICATIONS, 1975, 17 (11) :1431-1433
[7]   NEAR-NEIGHBOR CHEMICAL BONDING EFFECTS ON SI ATOM NATIVE BONDING DEFECTS IN SILICON-NITRIDE AND SILICON DIOXIDE INSULATORS [J].
LUCOVSKY, G ;
LIN, SY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1122-1128
[8]  
MOTT NF, 1971, ELECTRONIC PROCESSES, P42
[9]  
PEERCY PS, 1983, P S SILICON NITRIDE, V83, P3
[10]  
ROBERTSON J, 1984, APPL PHYS LETT, V44, P1122
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