HOPPING CONDUCTION AND DEFECT STATES IN REACTIVELY SPUTTERED SILICON-NITRIDE THIN-FILMS

被引：8

作者：

GIER, L

SCHARMANN, A

SCHALCH, D

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 98卷 / 02期

关键词：

D O I：

10.1002/pssa.2210980234

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：605 / 610

页数：6

相关论文

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