EPITAXY OF LIF ON GE(100)

被引：71

作者：

LAPIANOSMITH, DA

EKLUND, EA

HIMPSEL, FJ

TERMINELLO, LJ

机构：

[1] UNIV CALIF LAWRENCE LIVERMORE NATL LAB, LIVERMORE, CA 94550 USA

[2] BROOKHAVEN NATL LAB, NATL SYNCHROTRON LIGHT SOURCE, UPTON, NY 11973 USA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 17期

关键词：

D O I：

10.1063/1.106091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that LiF(100) films with the electronic properties of cleaved bulk LiF crystals can be grown epitaxially on Ge(100). These include an exceptionally large, negative electron affinity of -2.7 eV, which leads to intense photoemission at zero kinetic energy. The valence band offset ranges from 7.3-7.6 eV.

引用

页码：2174 / 2176

页数：3

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