ZEEMAN EFFECT OF IMPURITY LEVELS IN SILICON

被引:53
作者
ZWERDLING, S
BUTTON, KJ
LAX, B
机构
来源
PHYSICAL REVIEW | 1960年 / 118卷 / 04期
关键词
D O I
10.1103/PhysRev.118.975
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:975 / 986
页数:12
相关论文
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[2]  
BROWN R, UNPUB
[3]   INFRARED LATTICE ABSORPTION BANDS IN GERMANIUM, SILICON, AND DIAMOND [J].
COLLINS, RJ ;
FAN, HY .
PHYSICAL REVIEW, 1954, 93 (04) :674-678
[4]   ABSORPTION SPECTRA OF GROUP-V DONORS IN GERMANIUM [J].
FAN, HY ;
FISHER, P .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :270-&
[5]   OPTICAL AND MAGNETO-OPTICAL ABSORPTION EFFECTS OF GROUP-III IMPURITIES IN GERMANIUM [J].
FISHER, P ;
FAN, HY .
PHYSICAL REVIEW LETTERS, 1959, 2 (11) :456-458
[6]  
HAERING RR, 1958, CAN J PHYS, V8, P1161
[7]  
HROSTOWSKI, 1958, J PHYS CHEM SOLIDS, V4, P315
[8]   INFRARED SPECTRA OF GROUP-III ACCEPTORS IN SILICON [J].
HROSTOWSKI, HJ ;
KAISER, RH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (1-2) :148-153
[9]   THEORY OF DONOR AND ACCEPTOR STATES IN SILICON AND GERMANIUM [J].
KITTEL, C ;
MITCHELL, AH .
PHYSICAL REVIEW, 1954, 96 (06) :1488-1493
[10]  
KLEINER WH, 1959, B AM PHYS SOC, V4, P144